| PART |
Description |
Maker |
| BFG94T/R |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 60MA I(C) | SOT-223 晶体管|晶体管|叩| 12V的五（巴西）总裁| 60mA的一c）|的SOT - 223
|
DB Lectro, Inc.
|
| BCP56-10T1G |
High Current Transistor NPN; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 1 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-261AA
|
ON Semiconductor
|
| STN1HNC60 |
N-CHANNEL 600V 7 OHM 0.4A SOT-223 POWERMESH II MOSFET
N-CHANNEL 600V - 7ohm - 0.4A - SOT-223 PowerMesh?II MOSFET
N-CHANNEL 600V - 7ohm - 0.4A - SOT-223 PowerMeshII MOSFET
N-CHANNEL 600V - 7ohm - 0.4A - SOT-223 PowerMesh⑩II MOSFET N沟道600V 7ohm - 0.4A - SOT - 223封装MOSFET的第二PowerMesh
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| STN3NE06 4877 |
N-Channel 60V-0.08Ω-3A - SOT-223 STripFETTM Power MOSFET(Ｎ沟道功率ＭＯＳＦＥ
N - CHANNEL 60V - 0.08ohm- 3A - SOT-223 STripFET POWER MOSFET
N - CHANNEL 60V - 0.08W - 3A - SOT-223 STripFET] POWER MOSFET
From old datasheet system
|
意法半导
STMicroelectronics
|
| STN4NF06L |
N-channel 60 V, 0.07 Ohm, 4 A STripFET(TM) 2 Power MOSFET in SOT-223 package
|
ST Microelectronics
|
| IRLL2705TR |
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
International Rectifier
|
| IRFL024Z |
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
International Rectifier
|
| FZT1053ATA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
75V NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT-223
|
Diodes Incorporated
|
| STN3NE06L 6045 |
N-CHANNEL 60V - 0.08 OMH - 3A - SOT-223 - STRIPFET POWER MOSFET
N - CHANNEL 60V - 0.10 ohm - 3A - SOT-223 STripFETO POWER MOSFET
N - CHANNEL 60V - 0.10 - 3A - SOT-223 STripFET TM POWER MOSFET
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| CZSH5-40LEADFREE |
5 A, 40 V, SILICON, RECTIFIER DIODE SOT-223, 4 PIN
|
Central Semiconductor, Corp.
|
| CZR1-04CLEADFREE |
2 A, SILICON, RECTIFIER DIODE SOT-223, 4 PIN
|
Central Semiconductor, Corp.
|
